Raman Scattering and X-Ray Diffraction Measurements and Analyses of Zn O Thin Films Grown on Sapphire Substrates by Metal-organic Chemical Vapor Deposition
Abstract (300 words maximum)
The Raman Scattering (RS) characterization and X-Ray Diffraction technique was used to examine a series of Zn O thin films, grown on sapphire substrates using metal-organic chemical vapor deposition (MOCVD). In the current study, thin films of Zn O were grown in a custom-built Low-Pressure Rotating Disk MOCVD Reactor. The growth temperature ranged from 200 to 1000°C, and the growth pressure ranged from 5-80 Torr. A series of Zn O thin films with different thicknesses (10-230 nm) were grown on c-plane sapphire substrates to study the dynamics of Zn O growth. The samples were prepared with a constant O2 flow rate of 8348 mmol/min. Raman spectra revealed peaks at 99 cm-1 and 437 cm-1, corresponding to the Zn O crystallinity characteristics of E2 (low) and E2 (high), respectively. The Raman features from the sapphire substrate were present in the specimen with revealed peaks at various other locations, including a strong peak at 416 cm-1and XRD measurement provided us with the crystallography of the structure. The XRD scan sizes were between 0.1° and 0.005° for wide and fine scans, respectively. The wide scan of the sample SK123 ZnO on ZnO shows XRD data of ZnO (0002), (0004), and (0006) features. The sample also showed the existence of Sapphire. More measurements and analyses of other Zn O epi-films were obtained with similar results. The high crystalline quality of these Zn O materials was confirmed by optical characterization measurements and The structural purity of ZnO in the Sample was confirmed by both techniques.
Academic department under which the project should be listed
SPCEET - Electrical and Computer Engineering
Primary Investigator (PI) Name
Benjamin Klein
Additional Faculty
Dr. Ian Ferguson, Southern Polytechnic College of Engineering and Engineering Technology, ifergus3@kennesaw.edu
Evara Rogers, Engineering Lab, eroger54@kennesaw.edu
Raman Scattering and X-Ray Diffraction Measurements and Analyses of Zn O Thin Films Grown on Sapphire Substrates by Metal-organic Chemical Vapor Deposition
The Raman Scattering (RS) characterization and X-Ray Diffraction technique was used to examine a series of Zn O thin films, grown on sapphire substrates using metal-organic chemical vapor deposition (MOCVD). In the current study, thin films of Zn O were grown in a custom-built Low-Pressure Rotating Disk MOCVD Reactor. The growth temperature ranged from 200 to 1000°C, and the growth pressure ranged from 5-80 Torr. A series of Zn O thin films with different thicknesses (10-230 nm) were grown on c-plane sapphire substrates to study the dynamics of Zn O growth. The samples were prepared with a constant O2 flow rate of 8348 mmol/min. Raman spectra revealed peaks at 99 cm-1 and 437 cm-1, corresponding to the Zn O crystallinity characteristics of E2 (low) and E2 (high), respectively. The Raman features from the sapphire substrate were present in the specimen with revealed peaks at various other locations, including a strong peak at 416 cm-1and XRD measurement provided us with the crystallography of the structure. The XRD scan sizes were between 0.1° and 0.005° for wide and fine scans, respectively. The wide scan of the sample SK123 ZnO on ZnO shows XRD data of ZnO (0002), (0004), and (0006) features. The sample also showed the existence of Sapphire. More measurements and analyses of other Zn O epi-films were obtained with similar results. The high crystalline quality of these Zn O materials was confirmed by optical characterization measurements and The structural purity of ZnO in the Sample was confirmed by both techniques.