Disciplines
Materials Science and Engineering | Semiconductor and Optical Materials
Abstract (300 words maximum)
This study explores the potential of GaN on Si thin films as a promising material for high-temperature semiconductor devices, owing to its impressive thermal properties and performance characteristics. Two GaN on Si samples were grown using Metal Organic Chemical Vapor Deposition (MOCVD), with different film thicknesses, and their potential for high-temperature applications was comprehensively assessed by performing Raman spectroscopy at various temperature levels. The experimental results provided valuable insights into the material's behavior at elevated temperatures. At 300°C, the GaN E2 (High) peak showed a Raman shift at 562.38 cm⁻¹ for high-thickness samples and 561.49 cm⁻¹ for low-thickness samples. The corresponding Full Width at Half Maximum (FWHM) values were 8.07 cm⁻¹ and 8.11 cm⁻¹, respectively. As the temperature decreased to 200°C, the E2 (High) peak shifted to 563.99 cm⁻¹ for high-thickness samples and 562.75 cm⁻¹ for low-thickness samples. Notably, low-thickness samples exhibited a relatively consistent peak position and a narrower linewidth at this temperature. Further cooling to 100°C resulted in GaN E2 (High) peaks at 565.30 cm⁻¹ and 564.06 cm⁻¹ for high-thickness and low-thickness samples, respectively. Importantly, the FWHM decreased, indicating improved crystalline quality at lower temperatures. The A1 (LO) peak positions and FWHM values followed similar trends. This comprehensive analysis underscores the significant impact of GaN on Si thickness on its thermal performance, with lower thickness samples demonstrating superior thermal stability. The findings hold promise for optimizing GaN on Si thin film thickness in high-temperature semiconductor device applications, enhancing their reliability and efficiency, including GaN High Electron Mobility Transistors (HEMTs), Schottky diodes, power ICs, power modules, RF amplifiers, and microwave devices.
Academic department under which the project should be listed
SPCEET - Electrical and Computer Engineering
Primary Investigator (PI) Name
Sandip Das
Additional Faculty
Ian T. Ferguson, Electrical Computer Engineering, ifergus3@kennesaw.edu,
Zhe Chuan Feng, Electrical Computer Engineering, zfeng6@kennesaw.edu
Included in
Raman Spectroscopy of GaN on Si with Varied Thin Film Thickness for High-Temperature Semiconductor Devices
This study explores the potential of GaN on Si thin films as a promising material for high-temperature semiconductor devices, owing to its impressive thermal properties and performance characteristics. Two GaN on Si samples were grown using Metal Organic Chemical Vapor Deposition (MOCVD), with different film thicknesses, and their potential for high-temperature applications was comprehensively assessed by performing Raman spectroscopy at various temperature levels. The experimental results provided valuable insights into the material's behavior at elevated temperatures. At 300°C, the GaN E2 (High) peak showed a Raman shift at 562.38 cm⁻¹ for high-thickness samples and 561.49 cm⁻¹ for low-thickness samples. The corresponding Full Width at Half Maximum (FWHM) values were 8.07 cm⁻¹ and 8.11 cm⁻¹, respectively. As the temperature decreased to 200°C, the E2 (High) peak shifted to 563.99 cm⁻¹ for high-thickness samples and 562.75 cm⁻¹ for low-thickness samples. Notably, low-thickness samples exhibited a relatively consistent peak position and a narrower linewidth at this temperature. Further cooling to 100°C resulted in GaN E2 (High) peaks at 565.30 cm⁻¹ and 564.06 cm⁻¹ for high-thickness and low-thickness samples, respectively. Importantly, the FWHM decreased, indicating improved crystalline quality at lower temperatures. The A1 (LO) peak positions and FWHM values followed similar trends. This comprehensive analysis underscores the significant impact of GaN on Si thickness on its thermal performance, with lower thickness samples demonstrating superior thermal stability. The findings hold promise for optimizing GaN on Si thin film thickness in high-temperature semiconductor device applications, enhancing their reliability and efficiency, including GaN High Electron Mobility Transistors (HEMTs), Schottky diodes, power ICs, power modules, RF amplifiers, and microwave devices.