Raman Microscopic Measurement analyses of ZnO Thin Films grown on Sapphire by Metalorganic Chemical Vapor Deposition
Disciplines
Electrical and Computer Engineering
Abstract (300 words maximum)
The Raman Scattering (RS) characterization technique was employed to investigate ZnO thin films, grown on sapphire substrates through the process of metalorganic chemical vapor deposition (MOCVD). In this investigation, ZnO thin films were grown within a specifically designed Low-Pressure Rotating Disk MOCVD Reactor. The growth process involved a temperature range of 200 to 1000°C, with growth pressure spanning from 5 to 80 Torr. Diverse ZnO thin films with varying thicknesses (10-230 nm) were deposited on c-plane sapphire substrates. Samples were prepared with a consistent O2 flow rate of 8348 mmol/min. The Raman Microscope was used to measure the peaks of three different samples of ZnO at three different laser powers respectively: 10%, 50%, and 100%. These measurements were obtained with 1800 l/mm grating, a laser wavelength of 532nm and a Raman Shift with a range of 100cm-1 to 900 cm-1. The results indicated prominent peaks at 379 cm-1 (with a deviation of 1), 417 cm-1, 577 cm-1 (with a deviation of 1) and 750 cm-1 respectively. This study provides clarity regarding the identification of the samples as ZnO grown on Sapphire substrates and offers insights into the crystalline quality of the sample materials.
Academic department under which the project should be listed
SPCEET - Electrical and Computer Engineering
Primary Investigator (PI) Name
Benjamin Klein
Additional Faculty
Dr. Ian Ferguson, Dean of Southern Polytechnic College of Engineering and Engineering Technology and Professor of Electrical Engineering, ifergus3@kennesaw.edu
Dr. Zhe Chuan Feng, Department of Electrical Engineering, zfeng6@kennesaw.edu
Raman Microscopic Measurement analyses of ZnO Thin Films grown on Sapphire by Metalorganic Chemical Vapor Deposition
The Raman Scattering (RS) characterization technique was employed to investigate ZnO thin films, grown on sapphire substrates through the process of metalorganic chemical vapor deposition (MOCVD). In this investigation, ZnO thin films were grown within a specifically designed Low-Pressure Rotating Disk MOCVD Reactor. The growth process involved a temperature range of 200 to 1000°C, with growth pressure spanning from 5 to 80 Torr. Diverse ZnO thin films with varying thicknesses (10-230 nm) were deposited on c-plane sapphire substrates. Samples were prepared with a consistent O2 flow rate of 8348 mmol/min. The Raman Microscope was used to measure the peaks of three different samples of ZnO at three different laser powers respectively: 10%, 50%, and 100%. These measurements were obtained with 1800 l/mm grating, a laser wavelength of 532nm and a Raman Shift with a range of 100cm-1 to 900 cm-1. The results indicated prominent peaks at 379 cm-1 (with a deviation of 1), 417 cm-1, 577 cm-1 (with a deviation of 1) and 750 cm-1 respectively. This study provides clarity regarding the identification of the samples as ZnO grown on Sapphire substrates and offers insights into the crystalline quality of the sample materials.