Study of De Haas van Alphen oscillations in Cs (V1-xTix)3Sb5
Disciplines
Quantum Physics
Abstract (300 words maximum)
Kagome metals are known to be materials of great interest due to their propensity toward the stabilization of novel correlated and topological electronic states. Vanadium based Kagome metals such as CsV3Sb5 have exhibited charge density wave order and novel superconductivity at low temperature due to the presence of both sharply dispersing and non-dispersing electronic bands. Recently it has been shown that the Ti substitution for V produces two distinct domes of superconducting regions in the phase diagram of Cs(V1-xTix)3Sb5 mimicking the effect of hydrostatic pressure. To understand the evolution of Fermi surface upon Ti substitution, we have carried out magnetization measurements at high magnetic field and low temperatures. At such high magnetic fields and such low temperature, the magnetization oscillates and becomes periodic in inverse magnetic field, a phenomenon known as de Haas van Alphen effect. The number of distinct frequencies provide information about the number of electronic bands and their sizes, the temperature dependence of amplitudes of oscillations provides effective mass of the carriers, and the angle dependence of those frequencies provide the shape of the Fermi surface. In this work, I will present analysis of Fermi surface topology and effective mass of charge carriers in Cs(V3-xTix)3Sb5 and compare to parent compound CsV3Sb5.
Academic department under which the project should be listed
CSM - Physics
Primary Investigator (PI) Name
Chetan Dhital
Fall 2023 SoSS Oral Presentation
Study of De Haas van Alphen oscillations in Cs (V1-xTix)3Sb5
Kagome metals are known to be materials of great interest due to their propensity toward the stabilization of novel correlated and topological electronic states. Vanadium based Kagome metals such as CsV3Sb5 have exhibited charge density wave order and novel superconductivity at low temperature due to the presence of both sharply dispersing and non-dispersing electronic bands. Recently it has been shown that the Ti substitution for V produces two distinct domes of superconducting regions in the phase diagram of Cs(V1-xTix)3Sb5 mimicking the effect of hydrostatic pressure. To understand the evolution of Fermi surface upon Ti substitution, we have carried out magnetization measurements at high magnetic field and low temperatures. At such high magnetic fields and such low temperature, the magnetization oscillates and becomes periodic in inverse magnetic field, a phenomenon known as de Haas van Alphen effect. The number of distinct frequencies provide information about the number of electronic bands and their sizes, the temperature dependence of amplitudes of oscillations provides effective mass of the carriers, and the angle dependence of those frequencies provide the shape of the Fermi surface. In this work, I will present analysis of Fermi surface topology and effective mass of charge carriers in Cs(V3-xTix)3Sb5 and compare to parent compound CsV3Sb5.