Raman Spectroscopy and X-ray Diffraction of a Gadolinium doped Gallium Nitride Sample
Disciplines
Electrical and Electronics | Electronic Devices and Semiconductor Manufacturing
Abstract (300 words maximum)
For this study, we have analyzed and compared the Raman Spectroscopy and X-ray Diffraction of a Gadolinium (Ga) doped Gallium Nitride sample (2752-UGd) grown by metal-organic chemical vapor deposition (MOCVD) on a sapphire substrate. These samples have three layers, starting with a 400-500nm thick Ga:GdN layer, then a 2-micrometer thick intrinsic GaN layer which was grown on a layer of a sapphire substrate. The Raman data provided a detailed description of the homogeneity of the sample whereas the XRD measurement provided us with the crystallography of the structure. The XRD scan sizes were between 0.1° and 0.005° for wide and fine scans, respectively. The wide scan shows GaN (0002) peak around 34°, GaN (0004) peak at around 72° and GaN (0006) peak at around 126°. The sample also showed the existence of Sapphire which, Sapphire (0006) peaks at around 41° and Sapphire (00012) peaks at around 90°. The fine scans seem to confirm the wide scan peaks. For the Raman spectroscopy, The GaN E2 (low) and E2 (high), the Raman spectra showed peaks at 147 cm-1 and 571cm-1, accordingly. The GaN A1(LO) reached its peak at roughly 739 cm-1. One Sapphire peak was around 416 cm-1, which should be recalibrated at 419 cm-1. Both Raman and XRD have confirmed the structural and crystalline purity of GaN in the Gadolinium-doped Sample.
Academic department under which the project should be listed
SPCEET - Electrical and Computer Engineering
Primary Investigator (PI) Name
Benjamin Klein
Raman Spectroscopy and X-ray Diffraction of a Gadolinium doped Gallium Nitride Sample
For this study, we have analyzed and compared the Raman Spectroscopy and X-ray Diffraction of a Gadolinium (Ga) doped Gallium Nitride sample (2752-UGd) grown by metal-organic chemical vapor deposition (MOCVD) on a sapphire substrate. These samples have three layers, starting with a 400-500nm thick Ga:GdN layer, then a 2-micrometer thick intrinsic GaN layer which was grown on a layer of a sapphire substrate. The Raman data provided a detailed description of the homogeneity of the sample whereas the XRD measurement provided us with the crystallography of the structure. The XRD scan sizes were between 0.1° and 0.005° for wide and fine scans, respectively. The wide scan shows GaN (0002) peak around 34°, GaN (0004) peak at around 72° and GaN (0006) peak at around 126°. The sample also showed the existence of Sapphire which, Sapphire (0006) peaks at around 41° and Sapphire (00012) peaks at around 90°. The fine scans seem to confirm the wide scan peaks. For the Raman spectroscopy, The GaN E2 (low) and E2 (high), the Raman spectra showed peaks at 147 cm-1 and 571cm-1, accordingly. The GaN A1(LO) reached its peak at roughly 739 cm-1. One Sapphire peak was around 416 cm-1, which should be recalibrated at 419 cm-1. Both Raman and XRD have confirmed the structural and crystalline purity of GaN in the Gadolinium-doped Sample.