Disciplines
Condensed Matter Physics | Electronic Devices and Semiconductor Manufacturing
Abstract (300 words maximum)
Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 (low) and E2 (high) of ZnO. Gaussian fitting of the peaks is used to analyze the spectra data through Origin and Matlab software. The data confirms characteristic peaks for GaN and ZnO that agree with previous spectra of other GZ thin films. Many RS measurements were performed to confirm the crystalline quality of the sample for future characteristic testing.
Academic department under which the project should be listed
Electrical and Computer Engineering
Primary Investigator (PI) Name
Zhe Chuan Feng
Included in
Condensed Matter Physics Commons, Electronic Devices and Semiconductor Manufacturing Commons
Raman Scattering Measurements and Analyses of GaN Thin Films Grown on ZnO Substrates by Metalorganic Chemical Vapor Deposition
Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 (low) and E2 (high) of ZnO. Gaussian fitting of the peaks is used to analyze the spectra data through Origin and Matlab software. The data confirms characteristic peaks for GaN and ZnO that agree with previous spectra of other GZ thin films. Many RS measurements were performed to confirm the crystalline quality of the sample for future characteristic testing.