Disciplines
Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials
Abstract (300 words maximum)
This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width at half maximum (FWHM) from room temperature up to 300°C. The outcomes highlighted a pronounced relationship between the Al2O3 layer thickness and the GaN on Si structures' thermal behavior and crystalline state. The structure with no Al2O3 layer presented a notable peak shift from 563.23 cm-1 at room temperature to 558.75 cm-1 at 300°C, with FWHM expanding from 9.15 cm-1 to 14.90 cm-1, indicating the least thermal stability. Remarkably, the structure with a 20 nm Al2O3 passivation layer exhibited the highest thermal stability, with the peak position altering minimally from 564.29 cm-1 to 560.15 cm-1 and FWHM increasing from 7.10 cm-1 to 10.76 cm-1 over the same temperature range. This structure stands out as the most favorable for high-temperature operational environments, evidencing that optimal Al2O3 passivation layer thickness can significantly improve GaN on Si devices' thermal stability and crystalline quality. Such findings are vital for designing and developing robust devices capable of enduring extreme thermal conditions, particularly in power electronics and high-frequency transistor applications, where material performance and device reliability are paramount.
Academic department under which the project should be listed
SPCEET - Electrical and Computer Engineering
Primary Investigator (PI) Name
Ian T. Ferguson
Additional Faculty
Zhe Chuan Feng, SPCEET- Electrical and Computer Engineering, zfeng6@kennesaw.edu
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons
Influence of Al2O3 Passivation Layer Thickness on the Thermal Stability and Quality of MOCVD-Grown GaN on Si
This research delves into the significant impact of varying thicknesses of the Al2O3 passivation layer on the thermal stability and crystalline quality of GaN on Si structures, an essential aspect for the next generation of high-temperature electronic and optoelectronic devices. By adopting metal-organic chemical vapor deposition (MOCVD) for the growth process, we analyzed structures with different Al2O3 passivation layer thicknesses: none, 2 nm, 10 nm, and 20 nm, each built upon the GaN layer. Through Raman spectroscopy, we meticulously assessed the changes in the E2 (High) phonon mode's peak position and full width at half maximum (FWHM) from room temperature up to 300°C. The outcomes highlighted a pronounced relationship between the Al2O3 layer thickness and the GaN on Si structures' thermal behavior and crystalline state. The structure with no Al2O3 layer presented a notable peak shift from 563.23 cm-1 at room temperature to 558.75 cm-1 at 300°C, with FWHM expanding from 9.15 cm-1 to 14.90 cm-1, indicating the least thermal stability. Remarkably, the structure with a 20 nm Al2O3 passivation layer exhibited the highest thermal stability, with the peak position altering minimally from 564.29 cm-1 to 560.15 cm-1 and FWHM increasing from 7.10 cm-1 to 10.76 cm-1 over the same temperature range. This structure stands out as the most favorable for high-temperature operational environments, evidencing that optimal Al2O3 passivation layer thickness can significantly improve GaN on Si devices' thermal stability and crystalline quality. Such findings are vital for designing and developing robust devices capable of enduring extreme thermal conditions, particularly in power electronics and high-frequency transistor applications, where material performance and device reliability are paramount.