Title

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Department

Electrical and Computer Engineering

Document Type

Article

Publication Date

1-1-2021

Abstract

Exciton localization phenomena are considered here to comprehend the high internal quantum efficiency in InGaN/GaN multiple-quantum-well structures having discrete quantum dots (QDs) prepared by metal–organic-chemical-vapor deposition method on c-sapphire substrates. Spectroscopic results from the variable-temperature steady-state-photoluminescence and time-resolved photoluminescence (TRPL) are investigated. While the exciton localization is enhanced by strong localized states within the InGaN/GaN QDs–the impact of free carrier recombination cannot be ignored. The observed non-exponential decay in TRPL measurements is explained using a model by meticulously including localized exciton, non-radiative and free carrier recombination rates. A new method is proposed to calculate the internal quantum efficiency, which is supplementary to the traditional approach based on temperature-dependent photoluminescence measurement.

Journal Title

Journal of Materials Science

Journal ISSN

00222461

Volume

56

Issue

2

First Page

1481

Last Page

1491

Digital Object Identifier (DOI)

10.1007/s10853-020-05343-6

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