Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates
Electrical and Computer Engineering
We report the comprehensive spectroscopic results of AlN thin films deposited on the A-, R- and C-surfaces of sapphire substrates by radio frequency magnetron sputtering. The optical and structural properties of the epitaxial-grown AlN films were characterized using various techniques of high-resolution x-ray diffraction spectroscopy, x-ray photoelectron spectroscopy, Raman scattering spectroscopy, spectroscopic ellipsometry and associated analytical tools. Our large number of measurement results clearly show that sapphire substrates of different polarities have effects on the surface roughness, dislocation density, grain size, microstrain, and surface oxygen binding capacity of the film grown on its surface. The results obtained from Ellipsometry measurements show that the thickness, band gap and roughness of AlN films grown on C-plane sapphire are the smallest among the three samples. After careful analyses of the variable temperature Raman spectra, as the temperature rises from 80 K to 800 K, the AlN film has always exhibited tensile stress. In the same temperature range, the tensile stress of the AlN film grown on the C-plane sapphire has the greatest effect with temperature. The lifetime of E2 (high) phonons gradually decays with the increase of temperature.
Semiconductor Science and Technology
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